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Hydrogen On Semiconductor Surfaces

Published online by Cambridge University Press:  10 February 2011

J. A. Schaefer
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
T. Balster
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
V. Polyakov
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
U. Rossow
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
S. Sloboshanin
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
U. Starke
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
F. S. Tautz
Affiliation:
Institut für Physik, Technische Universität Ilmenau, PO 10 05 65, D-98684 Ilmenau, Germany, tphys@physik.tu-ilmenau.de
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Abstract

We review structural and electronic aspects of the reaction of hydrogen with semiconductor surfaces. Among others, we address the Si(100), GexSi1-x(100), GaAs(100), InP(100), SiC(100), SiC(0001) and SiC(0001) surfaces. It is demonstrated that high resolution electron energy loss spectroscopy (HREELS) in conjunction with a number of other surface sensitive techniques like low energy electron diffraction (LEED) and photoelectron spectroscopy (XPS/UPS) can yield important information about the surface atomic structure, the effects of hydrogen passivation and etching and on electronic properties of the surfaces.

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Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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