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Hysteresis Offset in Stress Induced Polarization-Graded Ferroelectrics

Published online by Cambridge University Press:  11 February 2011

J. V. Mantese
Affiliation:
Delphi Research Laboratories, Shelby Township, MI
N. W. Schubring
Affiliation:
Delphi Research Laboratories, Shelby Township, MI
A. L. Micheli
Affiliation:
Delphi Research Laboratories, Shelby Township, MI
M. P. Thompson
Affiliation:
Delphi Research Laboratories, Shelby Township, MI
R. Naik
Affiliation:
Department of Physics & Astronomy, Wayne State University, Detroit, MI
G. W. Auner
Affiliation:
Department of Electrical & Computer Engineering, Wayne State University, Detroit, MI
I. B. Misirlioglu
Affiliation:
Department of Metallurgy & Materials Engineering and Institute of Materials Science, University of Connecticut, Storrs, CT
Z.-G. Ban
Affiliation:
Department of Metallurgy & Materials Engineering and Institute of Materials Science, University of Connecticut, Storrs, CT
S. P. Alpay
Affiliation:
Department of Metallurgy & Materials Engineering and Institute of Materials Science, University of Connecticut, Storrs, CT
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Abstract

Polarization-graded ferroelectrics and their electrically active counterparts, graded ferroelectric devices (GFDs) and transpacitors has been achieved in a number ways, including a variation in the composition of the material, or impressing a temperature gradients across the structure. In this article, we report how these same devices can be formed from homogeneous ferroelectric films of lead strontium titanate by imposing stress gradients on the materials normal to their electrode surfaces. A qualitative description of asymmetric hysteresis behavior based on a modified Landau potential is provided.

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Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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