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Identification of An Interstitial Carbon – Interstitial oxygen Complex in Silicon

Published online by Cambridge University Press:  26 February 2011

J. M. Trombetta and
G. D. Watkins
J. M. Trombetta
Affiliation:
Department of Physics, Lehigh University Bethlehem, PA 18015, USA
G. D. Watkins
Affiliation:
Department of Physics, Lehigh University Bethlehem, PA 18015, USA
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Abstract

The Si-G15 EPR spectrum and the 0.79eV “C-line” luminescence spectra in silicon are shown to arise from an interstitial carbon - interstitial oxygen complex. The g-tensor and 13C hyperfine interaction tensor indicate the structure in the vicinity of the carbon atom while stress alignment studies reveal the configuration near the oxygen atom. The pairing of the two impurities leads to a lattice relaxation which serves to stabilize the complex against dissociation.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987, 93
Copyright
Copyright © Materials Research Society 1988

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References

Refrences

1.Watkins, G. D., in Radiation Damage in Semiconductors, edited by Baruch, P. (Dunod, Paris, 1965), p. 97.Google Scholar
2.Almeleh, N. and Goldstein, B., Phys. Rev. 149, 687 (1966).Google Scholar
3.Yukhnevich, A. V., Tkachev, V. D., and Bortnik, M. V., Sov. Phys. Sol. St. 8, 1004 (1966).Google Scholar
4.Mooney, P. M., Cheng, L. J., Suli, M., Gerson, J. D., and Corbett, J. W., Phys. Rev. B 15, 3836 (1977).Google Scholar
5.Foy, C. P., J. Phys. C 15, 2059 (1982).Google Scholar
6.Jones, C. E., Johnson, E. S., Compton, W. D., Noonan, J. R. and Streetman, B. G., J. App. Phys. 44, 5402 (1973).Google Scholar
7.Thonke, K., Watkins, O. D. and Sauer, R., Sol. St. Com. 51, 127 (1984).Google Scholar
8.Davies, G., Oates, A. S., Newman, R. C., Wooley, R., Lightowlers, E. C., Binns, M. J. and Wilkes, J. G., J. Phys. C 19, 841 (1986).Google Scholar
9.Thonke, K., Hangleiter, A., Wagner, J. and Sauer, R., J. Phys. C 18, L795 (1986).Google Scholar
10.Wagner, J., Thonke, K. and Sauer, R., Phys. Rev. B 29, 7051 (1984).Google Scholar
11.Yukhnevich, A. V., Tkachev, V. D., and Bortnick, M. V., Fiz. Tverd. Tela 8, 3213 (1966) [Sov. Phys. Sol. St. 8, 2571 (1967)].Google Scholar
12.Davies, G., Lightowlers, E. C., Wooley, R., Newman, R. C., and Oates, A. S., J. Phys. C 17, L499 (1984).Google Scholar
13.Newman, R. C., Infrared Studies of Crystal Defects, (Taylor and Francis Ltd., London, 1973), p. 128.Google Scholar
14.Goldstein, B., Wysocki, J. J., Almeleh, N., and Rappaport, P., C. F. S. T. I., N67-28927, as reported in Johnson, E. S. and Compton, W. D., Rad. Eff. 9, 89 (1971).Google Scholar
15.Lee, Y. H., Corbett, J. W. and Brower, K. L., Phys. Stat. Sol. 41, 673 (1977).Google Scholar
16.Trombetta, J. M. and Watkins, G. D., Appl. Phys. Lett. 51, 1103 (1987)Google Scholar
17.Kaplyanskii, A. A., Opt. Spec. 16, 329 (1964).Google Scholar
18.Watkins, G. D. and Brower, K. L., Phys. Rev. Let. 36, 1329 (1976).Google Scholar
19.Corbett, J. W., McDonald, R. S. and Watkins, G. D., J. Phys. Chem. Sol. 25, 873 (1964).Google Scholar
20.Bosomworth, D. R., Hayes, W., Spray, A. R. L., and Watkins, G. D., Proc. Roy. Soc. Lond. A. 317, 133 (1970)Google Scholar
21.DeLeo, G. G., Fowler, W. B., and Watkins, G. D., Phys. Rev. B 29, 3193 (1984)Google Scholar
22.Besson, M., DeLeo, G. G., and Fowler, W. B., Bull. Amer. Phys. Soc. 32, 404 (1987)Google Scholar
23.Svensson, B. G. and Lindstrom, J. L., Phys. Stat. Sol.(a) 95, 537 (1986)Google Scholar