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III-N Epitaxial Growth for Nitride Devices

Published online by Cambridge University Press:  01 February 2011

Russell Dupuis,
Theodore Chung,
Wonseok Lee,
Peng Li,
Jae Limb,
Jae-Hyun Ryou and
Dongwon Yoo
Russell Dupuis
Affiliation:
russell.dupuis@ece.gatech.edu, Georgia Institute of Technology, School of ECE, 777 Atlantic Drive NW, Atlanta, GA, 30332-0250, United States, 404-385-6094
Theodore Chung
Affiliation:
tchung@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, United States
Wonseok Lee
Affiliation:
wonseok@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, United States
Peng Li
Affiliation:
pli@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, United States
Jae Limb
Affiliation:
jaelimb@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, United States
Jae-Hyun Ryou
Affiliation:
jaehyun.ryou@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, United States
Dongwon Yoo
Affiliation:
dyoo@ece.gatech.edu, Georgia Institute of Technology, School of Electrical and Computer Engineering, United States
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Abstract

Various GaN-based device structures were grown on (0001) sapphire and 6H-SiC substrates by metalorganic chemical vapor deposition. The device structures of this study include a variety of p-n junction-based devices, such as InGaN/GaN multiple-quantum-well green light emitting diodes, GaN p-i-n vertical rectifiers, and GaN/InGaN heterojunction bipolar transistors. This paper describes the epitaxial growth and device performance characteristics of these device structures. We have developed state-of-of-the-art growth techniques for the materials that are critical for high-performance electronic and optoelectronic devices. High-performance InGaN HBTs, high-voltage GaN rectifiers and long-wavelength green LEDs have been epitaxially grown, fabricated, and characterized. The details of the material growth, device fabrication, and device characterization will be presented.

Keywords

epitaxynitrideelectronic material

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 892 , 2005, 0892-FF07-01-EE05-01
Copyright
Copyright © Materials Research Society 2006

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