Hostname: page-component-7b7567c8c-7pwfn Total loading time: 0 Render date: 2026-11-14T22:31:14.598Z Has data issue: false hasContentIssue false
  • English
  • Français

II-VI / III-V Strained-Layer Superlattice Materials and Devices

Published online by Cambridge University Press:  25 February 2011

Gan Fuxi,
Wang Hailong and
Cui Jie
Gan Fuxi
Affiliation:
Shanghai Institute of Optics & Fine Mechanics, Academia Sinica. P.O.Box 800-216, Shanghai 201800, P.R.China
Wang Hailong
Affiliation:
Shanghai Institute of Optics & Fine Mechanics, Academia Sinica. P.O.Box 800-216, Shanghai 201800, P.R.China
Cui Jie
Affiliation:
Shanghai Institute of Optics & Fine Mechanics, Academia Sinica. P.O.Box 800-216, Shanghai 201800, P.R.China
Get access

Abstract

The optical and spectroscopy properties of Il-VI wide gap semiconductor SLSs have been studied. We report the first observation of the pulse compression in ZnS-ZnSe MQW and the folded LA phonon modes in ZnS-ZnSe SLS;The confined LOn phonon modes in ZnSe-ZnTe SLS are observed and the critical thickness of ZnSe-ZnTe SLS are determined,for the first time, by Raman scattering.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Kobayashi, M., Kimura, R., Konagai, M. and Takahashi, K., J. Crystal Growth 81, 495(1987).Google Scholar
2. Karasawa, T., Ohkawa, K. and Mitsuyu, T., J. Crystal Growth 95, 547 (1989).CrossRefGoogle Scholar
3. Yokogawa, T., Ogura, M. and Kajiwara, T., Appl. Phys. Lett., 49, 1702(1986).Google Scholar
4. Taike, A., Teraguchi, N., Konagai, M. and Takahashi, K., Japan. J. Appl. Phys. 26, L989(1987).Google Scholar
5. Kobayash, M., Nino, N., Katagiri, H., Kimura, R., Konagai, N. and Takahash, K., J. Appl. Phys. 60, 773(1986).Google Scholar
6. Nakashima, S., Nakakura, Y., Fujiyasu, H. and Mochizuki, K., Appl. Phys. Lett. 46, 236(1986).Google Scholar
7. Nakashima, S., Wada, A., Fujiyasu, H., Aoki, N. and Yang, H., J. Appl. Phys. 11, 2009(1987).Google Scholar
8. Rajakarunanayake, Y., Miles, R.H., Wu, G.Y.,and McGill, T.C., Phys. Rev. B 317, 10212(1988).Google Scholar
9. Wang, Z.P., Jiang, D.S. and Ploog, K., Solid State Commun. 65, 661 (1988).Google Scholar
10. Olego, D. J., Shahzed, K., Cammack, D.A. and Cornelissen, H., Phys. Rev. B 38, 5554(1988).Google Scholar
11. Vagelatos, N., Wehe, D. and King, J. S., J. Chem. Phys. 60, 3613 (1974).Google Scholar
12. Hennion, B., Houssa, F., Pepy, G. and Kunc, K., Phys.Lett. 36A, 376 (1971).Google Scholar
13. Cerdeira, F., Buchenaure, C.J., Pollak, F.H. and Cardona, M., Phys. Rev. B 5, 580(1972).Google Scholar
14. Landol-t-Bornstein Tables, edited by Madelung, O., Schulz, H. and Weiss, H.(Springer. Berlin, 1982), Vol.II–17b.Google Scholar
15. Gibbs, H.H., Tarng, S.S., Jewell, J.L., Weinberger, D.A., Tai, K.,A.C. Gossard,McCall, S.L., Passnerand, A. Wiegmann, W., Appl.Phys.Lett. 41, 221(1982).Google Scholar
16. Tarng, S.S., Gibbs, H.M., Jewell, J.L., Peyghambarian, N., Gossard, A.C., Venkatesan, T.. and Wiefmann, W., Appl.Phys.Lett. AA360(1984).Google Scholar
17. Taghizadeh, N.R., Janossy, I., and Smith, S.D.,Appl.Phys.Lett. 46, 331(1985).Google Scholar
18. Kar, A.K.,and Wherrett, B.S., J. Opt. Soc. Am. B3,345(1986).Google Scholar
19. Kim, B. G., Garmire, E., Shibata, N., and Zembutsu, S., Appl.Phys. Lett. 5, 475(1987).Google Scholar
20. Kitagawa, F., Mishima, T., and Takahashi, K., J. Electrochem. Soc. 127, 937(1980).Google Scholar