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Impact of Electrodes on Gate Oxide Reliability: Examples from Isolation and Gate-Stack Processing

Published online by Cambridge University Press:  10 February 2011

D. L. Chapek,
K. F. Schuegraf and
R. P. S. Thakur
D. L. Chapek
Affiliation:
Micron Technology, Boise, ID 83707
K. F. Schuegraf
Affiliation:
Micron Technology, Boise, ID 83707
R. P. S. Thakur
Affiliation:
Micron Technology, Boise, ID 83707
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Abstract

This paper discusses the challenges involved in improving gate oxide reliability for advanced integrated circuits through review of literature and other relevant data. We believe that gate oxide reliability improvements can be engineered by paying special attention to the process conditioning of the top and bottom electrode components of the thin oxide dielectric system in advanced ULSI technologies. We present examples that demonstrate the impact of process and materials on the performance of thin oxide. The data encompasses the effects of substrate, isolation, and top electrodes on gate oxide quality using a variety of methodologies to assess reliability.

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