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Improved interface between front TCO and microcrystalline silicon p-i-n solar cells.

Published online by Cambridge University Press:  17 March 2011

E. Vallat-Sauvain,
S. Faÿ,
S. Dubail,
J. Meier,
J. Bailat,
U. Kroll and
A. Shah
E. Vallat-Sauvain
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
S. Faÿ
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
S. Dubail
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
J. Meier
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
J. Bailat
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
U. Kroll
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
A. Shah
Affiliation:
University of Neuchâtel, Institute of Microtechnology, rue A.L. Breguet 2, 2000 Neuchâtel, SWITZERLAND
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Abstract

The microstructure of microcrystalline silicon p-layers on zinc oxyde (ZnO) has been studied by Transmission Electron Microscopy (TEM). ZnO has been characterised by X-Rays diffraction and by Scanning Electron Microscopy (SEM). These reveal that the ZnO surface topography consists of regular pyramids with a (110) preferential crystallographic growth axis. High Resolution TEM observations indicate that the p- layer growth starts at the top of the ZnO pyramids. This results, for fully microcrystalline p-layers, in a decreased thickness at the bottom of the ZnO pyramids. When the p-layer is fully microcrystalline, no amorphous incubation layer could be observed between ZnO and p-silicon layer. Moreover, the high crystallinity of the p-layers in microcrystalline p-i-n devices is accompanied by an increased fill-factor in the I-V characteristics.

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References

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