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Improving Performance of Amorphous Silicon Solar Cells Using Tungsten Oxide as a Novel Buffer Layer between the SnO2/p-a-SiC Interface

Published online by Cambridge University Press:  01 February 2011

Liang Fang,
Seung Jae Baik,
Koseng Su Lim,
Seung Hyup Yoo,
Myung Soo Seo and
Sang Jung Kang
Liang Fang
Affiliation:
fang@kaist.ac.kr, Korea Advanced Institute of Science and Technology, School of Electrical Engineering and Computer Science, Semiconductor Building 2302, School of Electrical Engineering and Computer Science, Daejeon, 305-7-1, Korea, Republic of, 82-042-350-8027, 82-042-350-
Seung Jae Baik
Affiliation:
solar100@kaist.ac.kr, Korea Advanced Institute of Science and Technology, School of Electrical Engineering and Computer Science, Daejeon, Korea, Republic of
Koseng Su Lim
Affiliation:
kslim@ee.kaist.ac.kr, School of Electrical Engineering and Computer Science, Daejeon, Korea, Republic of
Seung Hyup Yoo
Affiliation:
syoo@ee.kaist.ac.kr, KAIST, Electrical Engineering, 373-1 Guseong-dong, Daejeon, 305-701, Korea, Republic of
Myung Soo Seo
Affiliation:
audience1123@paran.com, Korea Advanced Institute of Science and Technology, School of Electrical Engineering and Computer Science, Daejeon, Korea, Republic of
Sang Jung Kang
Affiliation:
goska777@kaist.ac.kr, Korea Advanced Institute of Science and Technology, School of Electrical Engineering and Computer Science, Daejeon, Korea, Republic of
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Abstract

A thermally evaporated p-type amorphous tungsten oxide (p-a-WO3) film was introduced as a novel buffer layer between SnO2 and p-type amorphous silicon carbide (p-a-SiC) of pin-type amorphous silicon (a-Si) based solar cells. By using this film, a-Si solar cells with a p-a-WO3 /p-a-SiC double p-layer structure were fabricated and the cell photovoltaic characteristics were investigated as a function of p-a-WO3 layer thickness. By inserting a 2 nm-thick p-a-WO3 layer between SnO2 and a 6 nm-thick p-a-SiC layer, the short circuit current density increased from 9.73 to 10.57 mA/cm2, and the conversion efficiency was enhanced from 5.17 % to 5.98 %.

Keywords

amorphousthin filmdevices

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