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The Influence of Point Defects on Diffusion and Gettering in Silicon

Published online by Cambridge University Press:  21 February 2011

U. Gösele and
T. Y. Tan
U. Gösele
Affiliation:
Siemens Research Laboratories, 8000 München 83, Fed. Rep. Germany
T. Y. Tan
Affiliation:
IBM Th. J. Watson Research Center, Yorktown Heights, N.Y. 10598, USA
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Abstract

In a first part, we deal with the influence of intrinsic point defects (vacancies and self-interstitials) on self- and impurity diffusion in silicon. Estimates of the diffusivities and thermal equilibrium concentrations of vacancies and self-interstitials are given. In a second partwe discuss the influence of point defects on the diffusion and precipitation of different types of metallic impurities in various gettering schemes as well as on the nucleation and growth of SiO2 precipitates.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 36: Symposium C – Impurity Diffusion and Gettering in Silicon , 1984, 105
Copyright
Copyright © Materials Research Society 1985

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References

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