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InGaN MQW LED structures using AlN/GaN DBR and Ag-based p-contact

Published online by Cambridge University Press:  12 April 2011

K. Lee,
L. E. Rodak,
V. Kumbham,
V. Narang,
J. S. Dudding,
R. Rahimi,
S. Kuchibhatla,
L. Hornak and
D. Korakakis
K. Lee
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
L. E. Rodak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
V. Kumbham
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
V. Narang
Affiliation:
Department of Physics, West Virginia University, Morgantown, WV 26506, USA
J. S. Dudding
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
R. Rahimi
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
S. Kuchibhatla
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
L. Hornak
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
D. Korakakis
Affiliation:
Lane Department of Computer Science and Electrical Engineering, West Virginia University, Morgantown, WV 26506, USA
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Abstract

Resonant cavity light emitting diode (RCLED) structure was grown using digital AlGaN/GaN Distributed Bragg Reflector (DBR) and Ag-based p-contact. A five period of InGaN/GaN multi-quantum well (MQW) layers are placed between these two high reflectance mirrors. Digital AlGaN/GaN DBR have a maximum reflectivity of about 60 % at 445 nm and 90 % at 439 nm for 6 period and 12 period, respectively. Ag-based p-contact exhibits an average reflectance of around 85-90 % for a wavelength of 400-600 nm. The light output intensity of the RCLEDs with 12 period digital AlGaN/GaN DBR is higher by a factor of 3 as compared to that of the similar structure without digital AlGaN/GaN DBR at an injection current of 50 mA.

Keywords

III-Voptoelectronicvapor phase epitaxy (VPE)

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1288: Symposium G – Novel Fabrication Methods for Electronic Devices , 2011, mrsf10-1288-g11-21
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

[1] Zukauskasm, A., Shur, M. S., and Gaska, R., Introduction to Solid-State Light (Wiley, New York, 2002), p. 133–167.Google Scholar
[2] Huh, C., Kim, H. S., Kim, S. W., Lee, J. M., Kim, D. J., Lee, I. H., and Park, S. J., J. Appl. Phys. 87, 4464 (2000).Google Scholar
[3] Lin, C. F., Yao, H. H., Lu, J. W., Hsieh, Y. L., Kuo, H. C., and Wang, S. C., J. Crystal. Growth 261, 359 (2004)Google Scholar
[4] Huang, S. Y., Horng, R. H., Wang, W. K., and Wuu, D. S., Jpn. J. Appl. Phys. 45, 3433 (2006)Google Scholar
[5] Huang, S. Y., Horng, R. H., Tsai, Y. J., Lin, P. R., Wang, W. K., Feng, Z. C., Wuu, D. S., Semicond. Sci. Technol. 25, 035013 (2010).Google Scholar
[6] Lin, C. C. and Lee, C. T., IEEE Photo. Technol. Lett. 22, 1291 (2010)Google Scholar
[7] Optoelectomis Properties of Semiconductors and Superlattices, GaN and Related Materials II, edited by Pearton, S. J., (Canada, Gordon and Breach Science Publishers, 2000).Google Scholar
[8] Rodak, L. E., Miller, C. M., and Korakakis, D.. Mat. Res. Soc. Symp. Proc., 1195, 1195-B10-01 (2010).Google Scholar
[9] Charles, M. B., Zhang, Y., Kappers, M. J., and Humphreys, C. J., Phys. Stat. Sol. (a) 203, 1618 (2006).Google Scholar