Hostname: page-component-7b7567c8c-fvjsw Total loading time: 0 Render date: 2026-11-12T09:33:48.110Z Has data issue: false hasContentIssue false
  • English
  • Français

InGaN structure influence on efficiency droop

Published online by Cambridge University Press:  21 March 2014

Oleg Rabinovich
Oleg Rabinovich*
Affiliation:
National University of Science and Technology “Moscow Institute of Steel and Alloys”, P.O. Box 409, Moscow, 119313, Russian Federation.
Get access

Abstract

Simulation results of InGaN light-emitting diodes and efficiency droop are presented. A special method for investigating the changes in the semiconductor devices characteristics due to different influencing factors is developed.

The cause of efficiency droop was detected-large difference in carrier lifetimes. The simulation results are used to suggest several techniques for improving LED efficiency up to 10-15 %.

Keywords

III-Vsimulationcrystallographic structure

Information

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1635: Symposium T – Compound Semiconductor Materials and Devices , 2014, pp. 15 - 22
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

Winston, D.W., “Physical simulation of optoelectronic semiconductor devices”. The thesis for the Doctor of Philosophy degree. Department of Electrical and Computer Engineering of the University of Colorado, (1996).Google Scholar
Rabinovich, O.I., “Electrical and optical AlGaInN light emitting diodes characteristics simulation”. The thesis for the Doctor of Philosophy degree. College of New Materials and Nanotechnology. National University of Science and Technology «Moscow Institute of Steel and Alloys», (2008).Google Scholar
www.ioffe.rssi.ru Google Scholar
Sh.F. Uedono, Chichibu A., Onuma, T., Nature materials. 5, 810. (2006).Google Scholar
Adyr, F.G., Simpsion, T.E., Appl. Phys. Lett., 93, 023109 (2008).Google Scholar
Lebby, M., Compound Semiconductors, 7, 37 (2012).Google Scholar