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InGaN/AlGaN Double-Heterostructure Blue Leds

Published online by Cambridge University Press:  21 February 2011

Shuji Nakamura
Shuji Nakamura*
Affiliation:
Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan
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Abstract

High-brightness InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with a luminous intensity of 1.2 cd were fabricated successfully for the first time. As an active layer, a Zn-doped InGaN layer was used. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 nm and 70 nm, respectively. The forward voltage was as low as 3.6V at 20 mA.

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References

REFERENCES

1. Strite, S. and Morkoç, H., J. Vacuum Sci. & Technol. B10, 1237 (1992).Google Scholar
2. Akasaki, I., Amano, H., Koide, Y., Hiramatsu, K. and Sawaki, N., J. Cryst. Growth 98, 209 (1989).Google Scholar
3. Amano, H., Kito, M., Hiramatsu, K. and Akasaki, I., Jpn. J. Appl. Phys. 28, L2112 (1989).Google Scholar
4. Khan, M. A., Kuznia, J. N., Van Hove, J. M., Olson, D. T., Kiishnankutty, S. and Kolbas, R. M., Appl. Phys. Lett. 58, 526 (1991).Google Scholar
5. Nakamura, S., Mukai, T. and Senoh, M., Jpn. J. Appl. Phys. 30, L1998 (1991).Google Scholar
6. Osamura, K., Naka, S. and Murakami, Y., J. Appl. Phys. 46, 3432 (1975).Google Scholar
7. Yoshimoto, N., Matsuoka, T., Sasaki, T. and Katsui, A., Appl. Phys. Lett. 59, 2251 (1991).Google Scholar
8. Nakamura, S. and Mukai, T., Jpn. J. Appl. Phys. 31, L1457 (1992).Google Scholar
9. Nakamura, S., Senoh, M. and Mukai, T., Jpn. J. Appl. Phys. 32, L8 (1993).Google Scholar
10. Nakamura, S., Senoh, M. and Mukai, T., Appl. Phys. Lett. 62, 2390 (1993).Google Scholar
11. Pankove, J. I. and Hutchby, J. A., Appl. Phys. Lett. 24, 281 (1974).Google Scholar
12. Jacob, G., Boulou, M. and Furtado, M., J. Cryst. Growth 42, 136 (1977).Google Scholar
13. Bergman, P., Ying, G., Monemar, B. and Holz, P. O., J. Appl. Phys. 61, 4589 (1987).Google Scholar
14. Nakamura, S., Jpn. J. Appl. Phys. 30, 1620 (1991).Google Scholar
15. Nakamura, S., Harada, Y. and Senoh, M., Appl. Phys. Lett. 58, 2021 (1991).Google Scholar
16. Nakamura, S., Mukai, T., Senoh, M. and Iwasa, N., Jpn. J. Appl. Phys. 31, L139 (1992).Google Scholar
17. Nakamura, S., Iwasa, N., Senoh, M. and Mukai, T., Jpn. J. Appl. Phys. 31, 1258 (1992).Google Scholar