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In-Situ Fabrication and Process Control Techniques in Rapid Thermal Processing†

Published online by Cambridge University Press:  28 February 2011

Mehrdad M. Moslehi
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
John Kuehne
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
Richard Yeakley
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
Lino Velo
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
Habib Najm
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
Bill Dostalik
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
David Yin
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
Cecil J. Davis
Affiliation:
Semiconductor Process and Design Center, Texas Instruments, Dallas, Texas 75265
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Abstract

Advanced rapid thermal processing (RTP) equipment and sensors have been developed for in-situ fabrication of semiconductor devices. High-performance multi-zone lamp modules have been applied to various processes including rapid thermal oxidation (RTO), chemicalvapor deposition (CVD) of tungsten and amorphous/polycrystalline silicon, silicide formation, as well as high-temperature rapid thermal annealing (RTA). Concurrent use of multizone lamps and multi-point temperature sensors allows real-time wafer temperature control and process uniformity optimization. Specific experimental results will be presented on the multi-zone lamp modules, in-situ process control sensors, and single-wafer fabrication processes.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 1991

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