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Integrated Decoupling Capacitors using Pb(Zr,Ti)O3 Thin Films

Published online by Cambridge University Press:  10 February 2011

D. Dimos,
S.J. Lockwood,
T.J. Garino,
H.N. Al-Shareef and
R.W. Schwartz
D. Dimos
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
S.J. Lockwood
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
T.J. Garino
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
H.N. Al-Shareef
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
R.W. Schwartz
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185.
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Abstract

Thin-film decoupling capacitors based on ferroelectric (Pb,La)(Zr,Ti)O3 films are being developed for use in advanced packaging applications. The increased integration that can be achieved by replacing surface-mount capacitors should lead to decreased package volume and improved high-speed performance. For this application, chemical solution deposition is an appropriate fabrication technique since it is a low-cost, high-throughput process. The use of relatively thick Pt electrodes (˜1 μm) to minimize series resistance and inductance is a unique aspect to fabricating these devices. In addition, the important electrical properties are discussed, with particular emphasis on lifetime measurements, which suggest that resistance degradation will not be a severe limitation on device performance. Finally, some of the work being done to develop methods of integrating these thin-film capacitors with ICs and MCMs is presented.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 433: Symposium T – Ferroelectric Thin Films V , 1996, 305
Copyright
Copyright © Materials Research Society 1996

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