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Integrated Optoelectronic Devices on Silicon

Published online by Cambridge University Press:  24 January 2012

Di Liang and
John E. Bowers
Di Liang
Affiliation:
Intelligent Infrastructure Lab, HP Labs, 1501 Page Mill Road, Palo Alto, CA 94304, U.S.A.Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, U.S.A.
John E. Bowers
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, U.S.A.
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Abstract

Silicon (Si) has been the dominating material platform of microelectronics over half century. Continuous technological advances in circuit design and manufacturing enable complementary metal-oxide semiconductor (CMOS) chips with increasingly high integration complexity to be fabricated in an unprecedently scale and economical manner. Conventional Si-based planar lightwave circuits (PLCs) has benefited from advanced CMOS technology but only demonstrate passive functionalities in most circumstances due to poor light emission efficiency and weak major electro-optic effects (e.g., Pockels effect, the Kerr effect and the Franz–Keldysh effect) in Si. Recently, a new hybrid III-V-on-Si integration platform has been developed, aiming to bridge the gap between Si and III-V direct-bandgap materials for active Si photonic integrated circuit applications. Since then high-performance lasers, amplifiers, photodetectors and modulators, etc. have been demonstrated. Here we review the most recent progress on hybrid Si lasers and high-speed hybrid Si modulators. The former include distributed feedback (DFB) lasers showing over 10 mW output power and up to 85 oC continuous-wave (cw) operation, compact hybrid microring lasers with cw threshold less than 4 mA and over 3 mW output power, and 4-channel hybrid Si AWG lasers with channel space of 360 GHz. Recently fabricated traveling-wave electro-absorption modulators (EAMs) and Mach-Zehnder interferometer modulators (MZM) on this platform support 50 Gb/s and 40 Gb/s data transmission with over 10 dB extinction ratio, respectively.

Keywords

optoelectronicSimicroelectronics

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