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Integrated Silicon Infrared Microspectrometers

Published online by Cambridge University Press:  10 February 2011

S.-H. Kong,
G. de Graaf and
R.F. Wolffenbuttel
S.-H. Kong
Affiliation:
Delft University of Technology, Faculty ITS, Dept. for Micro-electronics, Mekelweg 4, 2628 CD Delft, The Netherlands Phone +31 15 278 4707, Fax. +31 15 278 5755
G. de Graaf
Affiliation:
Delft University of Technology, Faculty ITS, Dept. for Micro-electronics, Mekelweg 4, 2628 CD Delft, The Netherlands Phone +31 15 278 4707, Fax. +31 15 278 5755
R.F. Wolffenbuttel
Affiliation:
Delft University of Technology, Faculty ITS, Dept. for Micro-electronics, Mekelweg 4, 2628 CD Delft, The Netherlands Phone +31 15 278 4707, Fax. +31 15 278 5755
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Abstract

Design, fabrication and performance of a microspectrometer for operation in the infrared spectral range between 1 and 8 μm and fabricated in silicon are presented. The opto-electrical system is composed of two bonded silicon wafers, which have been subjected to microelectronic process compatible micromachining to enable co-integration of the optical components (an aluminum based grating, an optical path in crystalline silicon and an array of integrated polysilicon thermocouples) with readout circuits in silicon. The FWHM is smaller than 0.5 μm at λ= 5 μm. The performance is compared to alternatives and directions for improving the selectivity are given.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 770: Symposium I – Optoelectronics of Group-IV-Based Materials , 2003, I4.1
Copyright
Copyright © Materials Research Society 2003

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