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Integration of Si-MBE and Device Processing

Published online by Cambridge University Press:  22 February 2011

D. J. Gravesteijn,
G. F. A. Van De Walle,
A. Pruijmboom and
A. A. Van Gorkum
D. J. Gravesteijn
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600JA Eindhoven, The Netherlands
G. F. A. Van De Walle
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600JA Eindhoven, The Netherlands
A. Pruijmboom
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600JA Eindhoven, The Netherlands
A. A. Van Gorkum
Affiliation:
Philips Research Laboratories, P.O. Box 80.000, 5600JA Eindhoven, The Netherlands
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Abstract

A review is given of the requirements on MBE-grown layers as far as processing is concerned. Aspects that are considered are: defect density, particulates, background doping and metallic contamination. The stability of the grown layers against thermal anneals is considered. It is shown that normal thermal diffusion in HBT structures is not important, other effects, like transient diffusion following ion implantation, have drastic effects on the grown profiles. As an example the processing of mesa-isolated heterojunction bipolar transistors is treated. It is shown that all-Si transistors can be grown with ideal Gummel plots. The Gummel plots of SiGe HBTs show small non-idealities. The current gain enhancement of the HBTs with respect to the all-Si transistors is shown to be as large as 200 times. Due to transient diffusion, parasitic barriers are formed, that have a detrimental effect on the AC and DC performance.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991, 3
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1) van Gorkum, A. A., van de Walle, G. F. A., van den Heuvel, R. A., Gravesteijn, D. J., Fredriksz, C. W., Thin Solid Films 184, 207 (1990)Google Scholar
2) Pindoria, G., Houghton, R. F., Hopkinson, M., Whall, T., Kubiak, R. A. A., Parker, E. H. C., J. Vac. Sci. Technol. B 8, 21 (1990)CrossRefGoogle Scholar
3) Marsh, O. J., in Proc. Sec. Int. Symp. on Silicon Molecular Beam Epitaxy Vol 88–6, edited by Bean, J. C., and Schowalter, L. J. (The Electrochemical Society, Pennington, New Jersey, 1988), 333 Google Scholar
4) Delage, S. L., Iyer, S. S., Scilla, G. J., in Proc. Sec. Int. Symp. on Silicon Molecular Beam Epitaxy Vol 88–6, edited by Bean, J. C., and Schowalter, L. J. (The Electrochemical Society, Pennington, New Jersey, 1988), 459 Google Scholar
5) Parker, E. H. C., Whall, T. E., in Proc. Sec. Int. Symp. on Silicon Molecular Beam Epitaxy Vol 88–6, edited by Bean, J. C., and Schowalter, L. J. (The Electrochemical Society, Pennington, New Jersey, 1988), 347 Google Scholar
6) Pruijmboom, A., Slotboom, J. W., Gravesteijn, D. J., Fredriksz, G. W., van Gorkum, A. A., van de Heuvel, R. A., van Rooij-Mulder, J. M. L., Streutker, G., van de Walle, G. F. A., El. Dev. Lett, in pressGoogle Scholar
7) Sidebotham, E. C., Peaker, A. R., Hamilton, B., Hopkinson, M., Houghton, R., Patel, G., Whall, T. W. and Parker, E. H. C., in Proc. Sec. Int. Symp. on Silicon Molecular Beam Epitaxy Vol 88–6, edited by Bean, J. C., and Schowalter, L. J. (The Electrochemical Society, Pennington, New Jersey, 1988), 360 Google Scholar
8) Casel, A., Kasper, E., Kibbel, H. and Sasse, E., J. Vac. Sci. Technol. B 5, 1650 (1987).Google Scholar
9) Grunthaner, P. J., Grunthaner, F. J., Fathauer, R. W., Lin, T. L., Hecht, M. H., Bell, L. D., Kaiser, W. J., Schowengerdt, F. D., Mazur, J. H., Thin Sol. Films 10) 183, 197 (1989)Google Scholar
Iyer, S. S., Patton, G. L., Delage, S. L., Tiwari, S. and Stork, J. M. C., in Proc. Sec. Int. Symp. on Silicon Molecular Beam Epitaxy Vol 88–6, edited by Bean, J.C., and Schowalter, L. J. (The Electrochemical Society, Pennington, New Jersey, 1988), 114 Google Scholar
11) Kasper, E., Kibbel, H. and Schaeffler, F. in Proc. Sec. Int. Symp. on Silicon Molecular Beam Epitaxy Vol 88–6, edited by Bean, J. C., and Schowalter, L. J. (The Electrochemical Society, Pennington, New Jersey, 1988), 590 Google Scholar
12) Houghton, D. C., Appl. Phys. Lett 57, 2124 (1990)Google Scholar
13) Houghton, D. C., Gibbings, C. J., Tuppen, C. G., Lyons, M. H., and Halliwell, M. A. G., Appl. Phys. Lett. 56, 460 (1990)Google Scholar
14) Holländer, B., Mantl, S., Stritzker, B., Jorke, H., Kasper, E., J. Mat. Res. 4, 163 (1989)Google Scholar
15) van de Walle, G. F. A., van IJzendoorn, L. J., van Gorkum, A. A., van den Heuvel, R. A., Theunissen, A. M. L., Semicond. Sci. Technol. 5, 345 (1990)Google Scholar
16) Mishima, T., Fredriksz, C. W., van de Walle, G. F. A., Gravesteijn, D. J., van den Heuvel, R. A., van Gorkum, A. A., Appl. Phys. Lett. 57, 2567 (1990)Google Scholar
17) Abstreiter, G., Brugger, H., Wolf, T., Jorke, H., Herzog, H. J., Phys. Rev. Lett. 54, 2441 (1985)Google Scholar
18) People, R., Bean, J. C., Lang, D. V., Sergent, A. M., Störnier, H. L., Wecht, K. W., Lynch, T.R., and Baldwin, K., Appl. Phys. Lett. 45, 1231 (1984)CrossRefGoogle Scholar
19) See e.g., Bean, J. C. in Silicon-molecular Beam epitaxy, Vol. 2, Kasper, E., Bean, J. C. eds (CRC Press Boca Raton, 1988)Google Scholar
20) Iyer, S. S., Patton, G. L., Stork, J. M. C., Meyerson, B. S., Harame, D. L., IEEE Trans. El. Dev. 36, 2043 (1989)CrossRefGoogle Scholar
21) Dodson, B. W., Tsao, J. Y., in Proc. Sec. Int. Symp. on Silicon Molecular Beam Epitaxy Vol 88–6, edited by Bean, J. C., and Schowalter, L. J. (The Electrochemical Society, Pennington, New Jersey, 1988), 105 Google Scholar
22) Hull, R., Bean, J. C., Bonar, J. M., Higashi, G. S., Short, K. T., Temkin, H., and White, A. E., Appl. Phys. Lett 56, 2445 (1990)Google Scholar
23) Iyer, S. S., Metzger, R. A., Allen, F. G., J. Appl. Phys. 52, 5608 (1981)Google Scholar
24) Noble, D. B., Hoyt, J. L., Gibbons, J. F., Scott, M. P., Laderman, S. S., Rosner, S. J., Kamins, T.I., Appl. Phys. Lett 55, 1978 (1989)CrossRefGoogle Scholar
25) Narozny, P., Dämbkes, H., Kibbel, H., Kasper, E., IEEE Trans. Elec. Dev. 36, 2363 (1989)Google Scholar
26) Higashi, G. S., Bean, J. C., Buescher, C., Yadvish, R., Temkin, H., Appl. Phys. Lett 56, 2560 (1990)Google Scholar
27) Prinz, E. J., Garone, P. M., Schwartz, P. V., Xiao, X., Sturm, J. C., IEEE IEDM89 Technical Digest, 639 (1989)Google Scholar
28) Sturm, J. C., Prinz, E. J., Garone, P. M. and Schwartz, P. V., Appl. Phys. Lett 54, 2707 (1989)Google Scholar