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The Interaction of CF3 + and CH4 + With SiO2 Surfaces

Published online by Cambridge University Press:  28 February 2011

D. J. Thomson and
C. R. Helms
D. J. Thomson
Affiliation:
Stanford Electronics Laboratory, Stanford University Stanford, California 94305
C. R. Helms
Affiliation:
Stanford Electronics Laboratory, Stanford University Stanford, California 94305
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Abstract

In this paper we present experimental results and a theoretical model for the interaction of CF3 + and CH4 + with SiO2 surfaces.A comparision of the sputter rates for CF3 + and CH4 + with a molecular sputtering model shows that there is a chemical enhacment in the etch rate for CF3 + but not for CH4 +.By comparing the Si (LVV) AES spectra for these two surfaces we have determined that the enhancement is due to the strong Si-F bond promoting the formation of volatile carbon containing compounds.

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MRS Online Proceedings Library (OPL) , Volume 68: Symposium C – Plasma Processing , 1986, 441
Copyright
Copyright © Materials Research Society 1986

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