Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by Crossref.
Ledebo, Lars
1988.
New Developments in Semiconductor Physics.
Vol. 301,
Issue. ,
p.
268.
Rossouw, C.J.
Pain, G.N.
Glanvill, S.R.
and
McDonald, D.C.
1990.
Interdiffusion profiles in MOCVD CdTe/HgTe superlattices and Hg1−xCdxTe multilayers.
Journal of Crystal Growth,
Vol. 106,
Issue. 4,
p.
673.
Steigerwald, M. L.
1992.
Inorganometallic Chemistry.
p.
333.
Patriarche, G.
Triboulet, R.
Marfaing, Y.
and
Castaing, J.
1993.
Imperfections in II–VI semiconductor layers epitaxially grown by organometallic chemical vapour deposition on GaAs.
Journal of Crystal Growth,
Vol. 129,
Issue. 3-4,
p.
375.
Bajaj, J.
Irvine, S. J. C.
Sankur, H. O.
and
Svoronos, Spyros A.
1993.
Modeling of in situ monitored laser reflectance during MOCVD growth of HgCdTe.
Journal of Electronic Materials,
Vol. 22,
Issue. 8,
p.
899.
Han, M S
Kang, T W
Leem, J H
and
Kim, T W
1998.
Diffusion mechanisms in intermixed HgTe/CdTe superlattices.
Semiconductor Science and Technology,
Vol. 13,
Issue. 8,
p.
915.

so as to assess the potential applicability of the technique to the growth of other II–VI or III–V alloys. The development of IMP for the growth of CMT layers, together with the properties of the layers and their suitability for use in the fabrication of IR detectors, are reviewed.