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Interdiffusion and Stress Evolution During Solid-State Amorphization in Ni-Hf Thin-Film Diffusion Couples

Published online by Cambridge University Press:  15 February 2011

M. Atzmon and
W. S. L. Boyer
M. Atzmon
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, Department of Materials Science and Engineering, The University of Michigan, Ann Arbor, MI 48109-2104
W. S. L. Boyer
Affiliation:
Department of Nuclear Engineering and Radiological Sciences, The University of Michigan, Ann Arbor, MI 48109-2104
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Abstract

Using a combination of x-ray diffraction and curvature measurements, the stress evolution during solid-state amorphization in a Ni-Hf diffusion couple has been monitored. In contrast to the Co-Hf system, no dissolution of Ni in Hf is observed. During interdiffusion, the growing amorphous layer develops a large tensile stress, which subsequently relaxes by creep. Irradiation of the diffusion couple leads to an increase in tensile stress, and a further increase following a subsequent anneal. Composition measurements by Rutherford backscattering spectrometry indicate absence of an effect of the stress variations on the effective interdiffusion coefficient.

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