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Interdiffusion in Coherent Si0.90Ge0.10/Si0.95Ge0.05 Superlattices

Published online by Cambridge University Press:  01 February 2011

D. B. Aubertine and
P. C. McIntyre
D. B. Aubertine
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
P. C. McIntyre
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305
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Abstract

We present the use of x-ray scattering from Si1-XGeX/Si1-YGeY superlattices as a tool for measuring the concentration dependence of interdiffusivity in Si/SiGe epitaxial thin films. Although x-ray scattering from compositionally modulated films is an ultra-high-sensitivity technique for measuring interdiffusion in a variety of systems, the concentration dependence of Si/SiGe interdiffusion complicates its interpretation. We show that these complications can be avoided using Si1-XGeX/Si1-YGeY superlattices with a small compositional modulation. This strategy is assessed using numerical simulations of both interdiffusion and dynamical x-ray diffraction. We demonstrate its effectiveness by measuring the activation enthalpy and exponential prefactor for interdiffusion in compressively strained Si0.925Ge0.075. The results are 4.38 ± 0.05 eV and 36 ± 9 cm2/s respectively.

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