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Interface Stability in Hybrid Transition Metal-Oxide Magnetic Junctions

Published online by Cambridge University Press:  10 February 2011

J. Z. Sun,
K. P. Roche and
S. S. P. Parkin
J. Z. Sun
Affiliation:
Ibm T. J. Watson Research Center, PO Box 218, Yorktown Heights, NY 10598, jonsun@us.ibm.com
K. P. Roche
Affiliation:
Ibm Almaden Research Center, 650 Harry Road, San Jose, CA 95120
S. S. P. Parkin
Affiliation:
Ibm Almaden Research Center, 650 Harry Road, San Jose, CA 95120
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Abstract

Recent experiments revealed an apparently bias-dependent tunneling magnetoresistance between a transition metal (such as Fe, Co) and an oxide barrier such as SrTiO3. We examine the materials issues involved in this type of hybrid transition metal-oxide junctions. The junction interface is shown to be unstable against thermal treatment or high-bias current stress. We conclude that the junction magnetoresistance is largely determined by the formation of an interface oxide layer different from the barrier or the transition metal electrode themselves.

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References

[1] Sun, J. Z., Abraham, D. W., Roche, K., and Parkin, S. S. P., Appl. Phys. Lett. 73, 1008 (1998).Google Scholar
[2] Teresa, J. M. De, Barthélémy, A., Contour, J. P., Fert, A., Lyonnet, R., Montaigne, F., Vaurès, A., and Seneor, P., MRS Symposium, 1999 Spring Meeting, San Francisco (1999).Google Scholar
[3] Teresa, J. M. De, Barthelemy, A., Fert, A., Contour, J. P., Lyonnet, R., Montaigne, F., Seneor, P., and Vaurès, A., Phys. Rev. Lett. 82, 4288 (1999).Google Scholar
[4] Teresa, Jose Maria De, Barthélémy, Agnés, Fert, Albert, Contour, Jean Pierre, Montaigne, François, and Seneor, Pierre, Science 286, 507 (1999).Google Scholar
[5] Sharma, Manish, Wang, Shan X., and Nickel, Janice H., Phys. Rev. Lett. 82, 616 (1999).Google Scholar
[6] Sun, J. Z., Gallagher, W. J., Duncombe, P. R., Krusin-Elbaum, L., Altman, R. A., Gupta, A., Lu, Yu, Gong, G. Q., and Xiao, Gang, Appl. Phys. Lett. 69, 3266 (1996).Google Scholar
[7] Sun, J. Z., Krusin-Elbaum, L., Gupta, A., Xiao, Gang, Duncombe, P. R., and Parkin, S. S. P., IBM J. of Res. and Dev. 42, 89 (1998).Google Scholar
[8] Sun, J. Z., Krusin-Elbaum, L., Duncombe, P. R., Gupta, A., and Laibowitz, R. B., Appl. Phys. Lett. 70, 1769 (1997).Google Scholar
[9] Lu, Yu, Li, X. W., Gong, G. Q., Xiao, Gang, Gupta, A., Lecoeur, P., Sun, J. Z., Wang, Y. Y., and Dravid, V. P., Phys. Rev. B 54, R8357 (1996).Google Scholar
[10] Mattheiss, L. F., Phys. Rev. B 6, 4718, 4740(1972).Google Scholar
[11] Pedersen, R. J. and Vernon, F. L., Appl. Phys. Lett. 10, 29 (1967).Google Scholar
[12] Veerdonk, R. J. M. Van de, Nowak, J., Meservey, R., Moodera, J. S. and Jone, W. J. M. De, Appl. Phys. Lett. 71, 2839(1997).Google Scholar
[13] Moodera, Jagadeesh S., Nowak, Janusz, and Veerdonk, Rene J. M. van de, Phys. Rev. Lett. 80, 2941 (1998).Google Scholar
[14] Moodera, Jagadeesh S., Nowak, Janusz, Kinder, Lisa R., Tedrow, Paul M., René, J. M. Van de Veerdonk, Smits, Bart A., Maarten Van Kampen, Henk Swagten, J. M., Jonge, Wim J. M. De, Phys. Rev. Lett. 83, 3029(1999).Google Scholar
[15] For a more complete description of the evolutoin of R(H) at different biases for these junctions, see Sun, J. Z., Roche, K. P. and Parkin, S. S. P., Phys. Rev. B 61, (April 1, 2000).Google Scholar
[16] Gundlach, K. H. and Konishi, H., Appl. Phys. Lett. 46, 441 (1985).Google Scholar
[17] Moeckly, B. H., Lathrop, D. K., and Buhrman, R. A., Phys. Rev. B 47, 400 (1993).Google Scholar