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Interface Structure and Layer Synthesis Modes in Mesotaxial Si/CoSi2/Si Structures

Published online by Cambridge University Press:  21 February 2011

R. Hull,
Y. F. Hsieh,
K. T. Short,
A. E. White and
D. Cherns
R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave. Murray Hill, NJ 07974
Y. F. Hsieh
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave. Murray Hill, NJ 07974
K. T. Short
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave. Murray Hill, NJ 07974
A. E. White
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave. Murray Hill, NJ 07974
D. Cherns
Affiliation:
H.H. Wills Physics Laboratory, Bristol University, Bristol, England
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Abstract

We report observations of interfacial structure and consequences for layer synthesis modes in mesotaxial Si/CoSi2/Si structures, as deduced from high resolution transmission electron microscopy (HRTEM). It is argued that relative crystal misalignments arising from the lattice parameter mismatch between the Si and CoSi2 may render classic rigid shift measurements of interfacial structure inaccurate. An alternative method for determining interfacial structure at threedimensional precipitates by analyzing crystal stacking sequences is demonstrated.

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