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Interface Structure of Ge/Si Superlattices Determined by X-Ray Absorption Fine Structure

Published online by Cambridge University Press:  22 February 2011

P. Aebi,
T. Tyliszczak,
A. P. Hitchcock,
J. -M. Baribeau,
D. J. Lockwood and
T. E. Jackman
P. Aebi
Affiliation:
Institute for Materials Research, McMaster University, Hamilton, L8S 4M1, CANADA.
T. Tyliszczak
Affiliation:
Institute for Materials Research, McMaster University, Hamilton, L8S 4M1, CANADA.
A. P. Hitchcock
Affiliation:
Institute for Materials Research, McMaster University, Hamilton, L8S 4M1, CANADA.
J. -M. Baribeau
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, CANADA.
D. J. Lockwood
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, CANADA.
T. E. Jackman
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, CANADA.
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Abstract

We illustrate the usefulness of the Extended X-ray Absorption Fine Structure (EXAFS) technique to determine the amount of interface mixing and strain condition in the study of (SimGen)p short-period superlattices. It is found that for n < 4, the number of Ge and Si nearest neighbours to Ge atoms is consistent with ∼25% interfacial mixing and that the Ge-Ge bond length corresponds to that of coherently strained Ge. The Si-Ge bond length is shorter, close to that of a strained Si0.25Ge0.75 alloy. For n > 4, the Ge-Ge bond length and the number of Si-Ge nearest neighbours increase significantly consistent with partial relaxation and interdiffusion. Raman scattering spectroscopy and x-ray reflectometry measurements are also presented and are consistent with the conclusions of the EXAFS analysis.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991, 253
Copyright
Copyright © Materials Research Society 1991

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References

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