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Interfacial Structure and Evolution in Mesotaxial CoSi2/Si Heterostructure

Published online by Cambridge University Press:  25 February 2011

S. R. Hull,
Y. F. Hsieh,
A. E. White and
K. T. Short
S. R. Hull
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
Y. F. Hsieh
Affiliation:
Now at ERSO/ETRI, Chutung, Hsinchu, Taiwan 300, Republic of China
A. E. White
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
K. T. Short
Affiliation:
AT&T Bell Laboratories, 600 Mountain Avenue, Murray Hill, NJ 07974
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Abstract

We describe the evolution and microstructure of Si/CoSi2/Si (100) and (111) heterostructures formed by Co+ ion implantation into Si substrates (“mesotaxy”), followed by high temperature annealing. It is shown that the CoSi2 precipitate nucleation and ripening process, and eventual coalescence into buried layers, is controlled by interfacial structure and energetics. Understanding and control of these processes allows for the first time synthesis of otherwise almost identical CoSi2 buried layers with either twinned or untwinned CoSi2/Si(111) interfaces.

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