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Interpretation of Stretched-Exponential Defect Kinetics in a-Si:H

Published online by Cambridge University Press:  21 February 2011

David Redfield
David Redfield*
Affiliation:
Stanford University, Department of Materials Science and Engineering, Stanford, CA 94305
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Abstract

A physical interpretation is given for the widespread observation of stretched-exponential time dependences for both light-induced generation and thermal anneal behavior of a-Si:H. This interpretation is based on a distribution of simultaneous rate processes, each of which represents a subset of normal metastable defects having a simple exponential behavior; it is thus an adaptation of one used for relaxation in glasses. The distribution can be evaluated from an observed stretched exponential, and for the case of thermal anneal with activated time constants, the stretch parameter should increase with temperature quite generally. The shape and width of the distributions of time constants and activation energies are inferred from these relations and properties of observed stretched exponentials.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992, 341
Copyright
Copyright © Materials Research Society 1992

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References

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