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Interval Annealing During Alternating Pulse Deposition

Published online by Cambridge University Press:  28 July 2011

J.F. Conley Jr.,
D.J. Tweet,
Y. Ono and
G. Stecker
J.F. Conley Jr.
Affiliation:
IC Process Technology Laboratory, Sharp Labs of America, Camas, WA
D.J. Tweet
Affiliation:
IC Process Technology Laboratory, Sharp Labs of America, Camas, WA
Y. Ono
Affiliation:
IC Process Technology Laboratory, Sharp Labs of America, Camas, WA
G. Stecker
Affiliation:
IC Process Technology Laboratory, Sharp Labs of America, Camas, WA
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Abstract

Thin films deposited via atomic layer deposition at low temperature tend to be less dense than bulk material and typically require high temperature post deposition annealing for densification and removal of unreacted precursor ligands. We have found that improved film densification can be achieved by interval annealing, in which in-situ moderate temperature (∼420°C) rapid thermal anneals are performed after every n deposition cycles. HfO2 film density and refractive index were found to increase with decreasing anneal interval (more frequent annealing). The highest density films could be achieved only by every-cycle annealing and could not be achieved by post deposition annealing. The densified every cycle annealed films have been shown to have improved equivalent thickness and leakage and decreased interfacial layer thickness.

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References

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