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Intrinsic and Dopant-Enhanced Solid Phase Epitaxy in Amorphous Germanium

Published online by Cambridge University Press:  01 February 2011

Brett Cameron Johnson,
Paul Gortmaker and
Jeffrey C. McCallum
Brett Cameron Johnson
Affiliation:
johnsonb@unimelb.edu.au, University of Melbourne, School of Physics, Swanston Street, Melbourne, N/A, Australia
Paul Gortmaker
Affiliation:
Australian National University, Department of Electronic Materials Engineering, Canberra, N/A, Australia
Jeffrey C. McCallum
Affiliation:
jeffreym@unimelb.edu.au, University of Melbourne, School of Physics, Swanston Street, Melbourne, N/A, Australia
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Abstract

The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are studied in thick amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates for H-free Ge were measured with a time-resolved reflectivity (TRR) system in the temperature range 300 – 540 °C and found to have an activation energy of (2.15 ± 0.04) eV. Dopant enhanced SPE was measured in a-Ge layers containing a uniform concentration profile of implanted As spanning the concentration regime 1 – 10 × 1019 cm3. The generalized Fermi level shifting model shows excellent fits to the data.

Keywords

crystal growthGekinetics

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1070: Symposium E – Doping Engineering for Front-End Processing , 2008, 1070-E05-06
Copyright
Copyright © Materials Research Society 2008

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