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Ion Beam Assisted Quantum well Intermixing

Published online by Cambridge University Press:  21 February 2011

R. D. Goldberg,
I. V. Mitchell,
S. Charbonneau,
P. Poole,
E. S. Koteles,
G. Aers and
G. Weatherly
R. D. Goldberg
Affiliation:
Department of Physics, The University of Western Ontario, London, Ontario, N6A 3K7, Canada.
I. V. Mitchell
Affiliation:
Department of Physics, The University of Western Ontario, London, Ontario, N6A 3K7, Canada.
S. Charbonneau
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada.
P. Poole
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada.
E. S. Koteles
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada.
G. Aers
Affiliation:
Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada.
G. Weatherly
Affiliation:
Department of Materials Engineering and Metallurgy, McMaster University, Hamilton, L8S 4K1, Canada.
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Abstract

Significant progress has been made in the past year in the use of high energy (MeV) ion irradiation to tune the bandgap and therefore emission wavelengths of single and multiple quantum well structures. These shifts are attributable to compositional mixing across the well and barrier layer interfaces, a process that is driven by the vacancy flux, released during the anneal stage, from radiation defects. We present data from a series of measurements in both GaAs- and InP-based QW structures to demonstrate the importance of the implantation parameters chosen (ion species, energy, flux, fluence and implant temperature). The dramatic difference in the response of these two systems with regard to the implant depth is believed to be associated with the very different diffusivities of the Gp III site vacancies. Prospects for implementing the irradiation approach as a spatially selective, planar process in integrated optoelectronic circuitry look very attractive and are illustrated for both passive and active components by reference to recent results from tuned wavelength lasers.

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References

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