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Ion Channel Sensor on a Silicon Support

Published online by Cambridge University Press:  15 March 2011

Michael Goryll,
Seth Wilk,
Gerard M. Laws,
Stephen M. Goodnick,
Trevor J. Thornton,
Marco Saraniti,
John M. Tang and
Robert S. Eisenberg
Michael Goryll
Affiliation:
Arizona State University, Department of Electrical Engineering, Tempe, AZ 85287
Seth Wilk
Affiliation:
Arizona State University, Department of Electrical Engineering, Tempe, AZ 85287
Gerard M. Laws
Affiliation:
Arizona State University, Department of Electrical Engineering, Tempe, AZ 85287
Stephen M. Goodnick
Affiliation:
Arizona State University, Department of Electrical Engineering, Tempe, AZ 85287
Trevor J. Thornton
Affiliation:
Arizona State University, Department of Electrical Engineering, Tempe, AZ 85287
Marco Saraniti
Affiliation:
Illinois Institute of Technology, Department of Electrical and Computer Engineering, Chicago, IL 60616
John M. Tang
Affiliation:
Rush Medical College, Department of Molecular Biophysics and Physiology, Chicago, IL 60612
Robert S. Eisenberg
Affiliation:
Rush Medical College, Department of Molecular Biophysics and Physiology, Chicago, IL 60612
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Abstract

We are building a biosensor based on ion channels inserted into lipid bilayers that are suspended across an aperture in silicon. The process flow only involves conventional optical lithography and deep Si reactive ion etching to create micromachined apertures in a silicon wafer. In order to provide surface properties for lipid bilayer attachment that are similar to those of the fluorocarbon films that are currently used, we coated the silicon surface with a fluoropolymer using plasma-assisted chemical vapor deposition. When compared with the surface treatment methods using self-assembled monolayers of fluorocarbon chemicals, this novel approach towards modifying the wettability of a silicon dioxide surface provides an easy and fast method for subsequent lipid bilayer formation. Current-Voltage measurements on OmpF ion channels incorporated into these membranes show the voltage dependent gating action expected from a working porin ion channel.

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