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Ion Implantation At Elevated Temperatures*

Published online by Cambridge University Press:  26 February 2011

Nghi Q. Lam and
Gary K. Leaf
Nghi Q. Lam
Affiliation:
Argonne National Laboratory, 9700 S. Cass Ave., Argonne, IL 60439
Gary K. Leaf
Affiliation:
Argonne National Laboratory, 9700 S. Cass Ave., Argonne, IL 60439
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Abstract

A kinetic model has been developed to investigate the synergistic effects of radiation-enhanced diffusion, radiation-induced segregation and preferential sputtering on the spatial redistribution of implanted solutes during implantation at elevated temperatures. Sample calculations were performed for Al+ and Si+ ions implanted into Ni. With the present model, the influence of various implantation parameters on the evolution of implant concentration profiles could be examined in detail.

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Footnotes

*

Work supported by the U. S. Department of Energy, BES-Materials Sciences, and BES-Applied Mathematical Sciences, under Contract W-31-109-Eng-38.

References

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