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Ion-Induced Mixing in Ni-Sio2Bilayers

Published online by Cambridge University Press:  25 February 2011

T. C. Banwell,
M-A. Nicolet,
P. J. Grunthaner and
T. Sands
T. C. Banwell
Affiliation:
California Institute of Technology, Pasadena, California 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, California 91125
P. J. Grunthaner
Affiliation:
Jet Propulsion Laboratory, Pasadena, California 91109
T. Sands
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, California 94720
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Abstract

We report on our studies of Ni transport induced by 300 keV Xe irradiationof 25 nm Ni films evaporated on thermally grown SiO2 at Xefluences of 1013-1016 cm-2 and attemperatures of 300-750 K during irradiation. Cross-sectional TEM, andselective etching combined with 2 MeV He backscattering spectrometry andESCA were used to profile the Xe and Ni within the SiO2. At 300K, backscattering shows cascade mixing dominates, although only ~ 1/35 thatpredicted by cascade theory, with most of the Ni in the SiO2contained in a resolution limited peak adjacent to the SiO2interface. TEM shows that this Ni is contained in a 5 nm band, 5 nm belowthe interface as Ni oxide clusters. Examination of the satellite structureof the Ni 2p line by XPS also shows this band is predominantly Ni2+. At 750 K, the near-surface peak vanishes and only recoilimplantation is evident. Ni0 is evident by XPS in samples irradiated at 300K, though not at higher temperatures. We explain our results in terms ofphase separation during cooling of the collision cascade.

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References

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