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Large Scale Statistics for Computational Verification of Grain Growth Simulations with Experiments

Published online by Cambridge University Press:  01 February 2011

Melik C. Demirel
Affiliation:
Carnegie Mellon University, Department of Materials Science & Engineering, PA, USATheoretical Division, T-1, Los Alamos National Laboratory, NM, USAMaterials Science and Technology, MST-8, Los Alamos National Laboratory, NM, USA
Andrew P. Kuprat
Affiliation:
Theoretical Division, T-1, Los Alamos National Laboratory, NM, USA
Denise C. George
Affiliation:
Theoretical Division, T-1, Los Alamos National Laboratory, NM, USA
Galen K. Straub
Affiliation:
Theoretical Division, T-1, Los Alamos National Laboratory, NM, USA
Amit Misra
Affiliation:
Materials Science and Technology, MST-8, Los Alamos National Laboratory, NM, USA
Kathleen Alexander
Affiliation:
Materials Science and Technology, MST-8, Los Alamos National Laboratory, NM, USA
Anthony D. Rollett
Affiliation:
Carnegie Mellon University, Department of Materials Science & Engineering, PA, USA
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Abstract

It is known that by controlling microstructural development, desirable properties of materials can be achieved. The main objective of our research is to understand and control interface dominated material properties, and finally, to verify experimental results with computer simulations. We have previously showed a strong similarity between small-scale grain growth experiments and anisotropic three-dimensional simulations obtained from the Electron Backscattered Diffraction (EBSD) measurements [1]. Using the same technique, we obtained 5170-grain data from an Aluminum-film (120μm thick) with a columnar grain structure. Experimentally obtained starting microstructure and grain boundary properties are input for the three-dimensional grain growth simulation. In the computational model, minimization of the interface energy is the driving force for the grain boundary motion. The computed evolved microstructure is compared with the final experimental microstructure, after annealing at 550°C.

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