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Large-Grain Polysilicon Films with Low Intragranular Defect Density by Low-Temperature Solid-Phase Crystallization

Published online by Cambridge University Press:  01 February 2011

Xiang-Zheng Bo,
Nan Yao and
J. C. Sturm
Xiang-Zheng Bo
Affiliation:
Center for Photonics and Opti-Electronic Materials, Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, U.S.A.
Nan Yao
Affiliation:
Princeton Materials Institute, Princeton University, Princeton, New Jersey 08544, U.S.A
J. C. Sturm
Affiliation:
Center for Photonics and Opti-Electronic Materials, Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, U.S.A.
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Abstract

Solid phase crystallization (SPC) of a-Si: H at 600°C was investigated by transmission electron microscopy (TEM) and Raman spectroscopy in a cantilever structure, where the underlying SiO2 was removed prior to the crystallization. The absence of the underlying oxide leads to both a higher grain size and a lower intragranular defect density. The grain size increases from 0.6 μm in regions with the underlying oxide to 3.0 μm without the underlying oxide, and the intragranular defect density decreases one order of magnitude from ∼ 1011 cm-2 to ∼ 1010 cm-2. The improvements in material quality without the lower a-Si/SiO2 interface are thought to be due to a lower nucleation rate and a lower tensile stress with an easier silicon atomic rearrangement at the lower silicon interface.

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