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Laser Diagnostics of Microelectronics Fabrication Processes

Published online by Cambridge University Press:  22 February 2011

J. Wormhoudt,
K. McCurdy and
A. Freedman
J. Wormhoudt
Affiliation:
Aerodyne Research, Inc., 45 Manning Road, Billerica, MA 01821
K. McCurdy
Affiliation:
Aerodyne Research, Inc., 45 Manning Road, Billerica, MA 01821
A. Freedman
Affiliation:
Aerodyne Research, Inc., 45 Manning Road, Billerica, MA 01821
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Abstract

Laser diagnostics, including long path infrared diode laser absorption and dye laser induced fluorescence, are able to provide microscopic information on the gas phase of such important semiconductor fabrication processes as plasma etching and plasma enhanced deposition. It is possible to measure temperatures, concentration profiles, and absolute concentrations if independent laboratory measurements of quantitative spectroscopic parameters have been made. Infrared band strength measurements on several molecular radicals important in semiconductor processing systems are described. We also describe a new apparatus which allows multipass absorption and laser induced fluorescence diagnostics of a large volume of plasma.

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