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Laser direct writing of graphene patterns

Published online by Cambridge University Press:  23 June 2011

J.B. Park
Affiliation:
Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511
W. Xiong
Affiliation:
Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511
Z.Q. Xie
Affiliation:
Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511
M. Mitchell
Affiliation:
Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511
Y. Gao
Affiliation:
Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511
M. Qian
Affiliation:
Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511
Y.F. Lu
Affiliation:
Department of Electrical Engineering, University of Nebraska-Lincoln, Lincoln, NE 68588-0511
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Abstract

Rapid growth of single-layer graphene using laser-induced chemical vapor deposition (LCVD) with a visible CW laser (λ = 532 nm) irradiation at room temperature was investigated. In this study, an optically-pumped solid-state laser with a wavelength of 532 nm irradiates a thin nickel foil to induce a local temperature rise, thereby allowing the direct writing of graphene patterns about ~10 μm in width with high growth rate on precisely controlled positions. It is demonstrated that the fabrication of graphene patterns can be achieved with a single scan for each graphene pattern using LCVD with no annealing or preprocessing of the substrate. The scan speed reaches to about ~50 um/s, which indicates that the graphene pattern with 1:1 aspect ratio (x:y) can be grown in 0.2 sec. The patterned graphene on nickel was transferred to SiO2/Si substrate for fabrication of electrical circuits and sensor devices.

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Type
Research Article
Copyright
Copyright © Materials Research Society 2011

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