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Laser Growth of Thin Silicon Crystals in Patterned Structures

Published online by Cambridge University Press:  15 February 2011

R. M. Fastow,
H. J. Leamy,
G. K. Celler,
Y. H. Wong and
C. J. Doherty
R. M. Fastow
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974
H. J. Leamy
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974
G. K. Celler
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974
Y. H. Wong
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974
C. J. Doherty
Affiliation:
Bell Laboratories, Murray Hill, New Jersey, 7974
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Abstract

Beam processing can be applied to thin, polycrystalline silicon films on amorphous substrates to: a( increase grain size, b( produce single, isolated crystals, and c( to produce oriented single crystals. Specific methods for these tasks are outlined. Crystal growth and heat flow consideration appropriate to each are presented.

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References

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