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Laser Induced Oxidation Effects in Bismuth Thin Films

Published online by Cambridge University Press:  07 January 2013

Marco A. Zepeda,
Michel Picquart and
Emmanuel Haro-Poniatowski
Marco A. Zepeda
Affiliation:
Departamento de Atención a la Salud, Universidad Autónoma Metropolitana Unidad Xochimilco, México DFDepartamento de Física, Universidad Autónoma Metropolitana Unidad Iztapalapa, México DF
Michel Picquart
Affiliation:
Departamento de Física, Universidad Autónoma Metropolitana Unidad Iztapalapa, México DF
Emmanuel Haro-Poniatowski*
Affiliation:
Departamento de Física, Universidad Autónoma Metropolitana Unidad Iztapalapa, México DF
*
* Corresponding author: haro@xanum.uam.mx
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Abstract

The Laser induced oxidation process of bismuth was investigated using Raman spectroscopy. Upon laser irradiation (λ = 532 nm) pure Bismuth was transformed gradually into Bi2O3. Raman spectra of the samples showed the characteristics peaks for pure Bi located at 71 cm-1 and 96 cm-1. The oxidation process was monitored by Raman spectra with four additional bands located at about 127 cm-1, 241 cm-1, 313 cm-1 and 455 cm-1. Maintaining constant the exposure time of irradiation, the intensity of these bands depended on laser irradiation power. The presence of Bi2O3 in the sample was confirmed through by energy dispersion spectroscopy (EDS).

Keywords

laser-induced reactionRaman spectroscopyBi

Information

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1477: Symposium S1A – Low-Dimensional Bismuth-based Materials , 2012, imrc12-1477-s1a-p016
Copyright
Copyright © Materials Research Society 2012 

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References

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