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Laser Processed Silicides for GaAs Hemts

Published online by Cambridge University Press:  21 February 2011

W.T. Anderson,
A. Christou,
P.E. Thompson,
J.L. Davis,
C.R. Gossett,
J.M. Eridon,
C. Michelakis,
G. Kiriakidis,
Z. Hatzopoulos and
T. Ethimiopoulos
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W.T. Anderson
Affiliation:
Naval Research Laboratory, Washington, D.C., 20375
A. Christou
Affiliation:
Naval Research Laboratory, Washington, D.C., 20375
P.E. Thompson
Affiliation:
Naval Research Laboratory, Washington, D.C., 20375
J.L. Davis
Affiliation:
Naval Research Laboratory, Washington, D.C., 20375
C.R. Gossett
Affiliation:
Naval Research Laboratory, Washington, D.C., 20375
J.M. Eridon
Affiliation:
Naval Research Laboratory, Washington, D.C., 20375
C. Michelakis
Affiliation:
Research Center of Crete, Heraklion, Crete, Greece
G. Kiriakidis
Affiliation:
Research Center of Crete, Heraklion, Crete, Greece
Z. Hatzopoulos
Affiliation:
Research Center of Crete, Heraklion, Crete, Greece
T. Ethimiopoulos
Affiliation:
Research Center of Crete, Heraklion, Crete, Greece
D M. Kudumas
Affiliation:
Research Center of Crete, Heraklion, Crete, Greece
D.V. Morgan
Affiliation:
University of Wales, College of Cardiff, Cardiff, U.K
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Abstract

Laser annealed refractory metal gates and Ohmic contacts have been developed for GaAs FETs and HEMTs fabricated on MBE layers grown on laser desorbed substrates. Amorphous refractory metal silicide films were sputter deposited by a method in which the RF power to separate refractory metal and silicon targets were set at predetermined deposition ratesand the substrates were rotated with respect to the sputter targets receiving a 0.2 to 0.5 nm film on each pass. The gate resistance was reduced and Ohmic contacts formed by pulsed excimer laser annealing.

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References

REFERENCES

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