Hostname: page-component-7b7567c8c-tnzcf Total loading time: 0 Render date: 2026-11-14T21:58:13.209Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser–Assisted Mos/Sos Transistor Fabrication*

Published online by Cambridge University Press:  15 February 2011

L.D. Hess,
S.A. Kokorowski,
G.L. Olson,
Y.M. Chi,
A. Gupta and
J.B. Valdez
L.D. Hess
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
S.A. Kokorowski
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
G.L. Olson
Affiliation:
Hughes Research Laboratories, Malibu, California, USA
Y.M. Chi
Affiliation:
Newport Beach Research Center, Hughes Aircraft Company, Newport Beach, California, USA
A. Gupta
Affiliation:
Newport Beach Research Center, Hughes Aircraft Company, Newport Beach, California, USA
J.B. Valdez
Affiliation:
Newport Beach Research Center, Hughes Aircraft Company, Newport Beach, California, USA
Get access

Abstract

CW laser annealing techniques were incorporated into standard MOS/SOS transistor fabrication procedures and found to be advantageous as compared to conventional furnace methods for electrical activation of ion–implanted source/drain dopants for both N- and P–MOS transistors. Static electrical characteristics of 2.4 μm channel–length transistors are similar for both types of annealing, whereas the speed of devices with cw laser annealed source–drain regions is increased 10 to 40%, depending on the operating voltage.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

Footnotes

*

Supported in part by U.S. Army ERADCOM, Contract No. DAAK20–80–C–0269.

References

REFERENCES

1. Glaser, A.B. and Subak–Sharpe, G.E., Integrated Circuit Engineering (Reading, Mass., Addison–Wesley, 1979).Google Scholar
2. Laser and Electron–Beam Solid Interactions and Materials Processing Gibbons, J.F., Hess, L.D. and Sigmon, T.W., Eds. (North Holland, New York, 1981), and preceding symposium volumes.Google Scholar
3. Zimmer, G., Electron. Lett. 15, 184 (1979).Google Scholar
4. Hess, L.D., Roth, J.A., Anderson, C.L. and Dunlap, H.L., Laser–Solid Interactions and Laser Processing, Ferris, S.D., Leamy, H.J. and Poate, J.M., Eds. (American Institute of Physics, New York, 1979), pp. 496–502;Google Scholar
4a Kokorowski, S.A., Olson, G.L. and Hess, L.D., J. Appl. Phys. (in press).Google Scholar
5. Olson, G.L., Hess, L.D., Yaron, G. and Peng, J., Laser and Electron–Beam Processing of Materials, White, C.W. and Peercy, P.S., Eds. (Academic Press, New York, 1980), pp. 291–296;Google Scholar
5a Yaron, G., Hess, L.D. and Olson, G.L., ibid, pp. 626–631.Google Scholar