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Laser-Processing for Patterned and Free-Standing Nitride Films

Published online by Cambridge University Press:  10 February 2011

M. K. Kelly ,
O. Ambacher ,
R. Dimitrov ,
H. Angerer ,
R. Handschuh  and
M. Stutzmann
M. K. Kelly
Affiliation:
Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
O. Ambacher
Affiliation:
Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
R. Dimitrov
Affiliation:
Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
H. Angerer
Affiliation:
Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
R. Handschuh
Affiliation:
Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
M. Stutzmann
Affiliation:
Walter Schottky Institut, Technische Universität München, 85748 Garching, Germany
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Abstract

Films of GaN and related materials can be processed by methods that invoke thermal decomposition, induced by intense illumination with a pulsed laser. At elevated temperatures, the nitride semiconductors undergo decomposition, with the effusion of nitrogen gas. We exploit this mechanism as an alternative to etching for the patterning of nitride films and for the opening of buried interfaces. Films of GaN have been etched to a depth of 1 μm in less than three seconds. This interface decomposition allows in particular the separation of nitride films from transparent growth substrates such as sapphire.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 973
Copyright
Copyright © Materials Research Society 1998

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References

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