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Lattice Parameter Changes in High Dose Ion-Implanted, Pulsed Laser Annealed GaAs:Si

Published online by Cambridge University Press:  25 February 2011

A. Compaan ,
H.D. Yao ,
P.M. Adams  and
J.F. Knudsen
A. Compaan
Affiliation:
The University of Toledo, Toledo, OH 43606
H.D. Yao
Affiliation:
The University of Toledo, Toledo, OH 43606
P.M. Adams
Affiliation:
Aerospace Corporation, Los Angeles, CA 90009
J.F. Knudsen
Affiliation:
Aerospace Corporation, Los Angeles, CA 90009
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Abstract

Double crystal x-ray diffraction has been used to examine the lattice parameter changes which occur in heavily Si-doped GaAs obtained by ion implantation of 28Si at 180 keV with doses up to 1 x 1016/cm2. The heavily damaged, implanted layer was pulsed laser annealed with single pulses from a 10 ns dye laser operating at 728 nm with an energy density of up to 0.9 J/cm2. Plasmon Raman scattering was used at the center of the laser-annealed spots to determine the free electron concentration which reached ∼4 × 1019/cm3. Double crystal rocking curves were obtained for <400> reflections from the pulsed laser annealed area and from the surrounding as-implanted region. The results show a dilation of the lattice of up to 0.5% in the as-implanted region and in the laser-annealed region a dilation of 0.025%. The residual lattice dilation after annealing is interpreted in terms of a dilation due to free carriers and a (smaller) contraction due to the Si atomic size effects.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 268: Symposium K – Materials Modification by Energetic Atoms and Ions , 1992 , 313
Copyright
Copyright © Materials Research Society 1992

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References

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