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Light Effects on Grain Boundary Properties in Silicon*

Published online by Cambridge University Press:  15 February 2011

L. J. Cheng and
C. M. Shyu
L. J. Cheng
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109, USA
C. M. Shyu
Affiliation:
Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109, USA
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Abstract

We have studied the photoconductivity of grain boundaries in p–type silicon. The result demonstrates the applicability of the technique for the measurement of minority carrier recombination velocity at the grain boundary. The experimental data are consistent with the thought that the recombination velocity increases with the boundary state density and light intensity.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 5: Symposium B – Grain Boundaries in Semiconductors , 1981, 105
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

The research described in this paper was carried out at Jet Propulsion Laboratory, California Institute of Technology, and was sponsored by the Flat-Plate Solar Arry Project of the U.S. Department of Energy through an agreement with NASA.

References

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