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Long-Wavelength Vertical-Cavity Surface-Emitting Laser Diodes

Published online by Cambridge University Press:  10 February 2011

D.I. Babic,
V. Jayaraman,
N. M. Margalit,
K. Streubel,
M.E. Heimbuch,
R.P. Mirin,
B.J. Thibeault,
J.E. Bowers,
E.L. Hu and
S. Denbaars
D.I. Babic
Affiliation:
Currently at Hewlett Packard Laboratories Palo Alto, CA
V. Jayaraman
Affiliation:
Optical Concepts, Lompoc, CA 93436
N. M. Margalit
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
K. Streubel
Affiliation:
Royal Institute of Technology, Stockholm, Sweden
M.E. Heimbuch
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
R.P. Mirin
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
B.J. Thibeault
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
J.E. Bowers
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
E.L. Hu
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
S. Denbaars
Affiliation:
Department of Electrical and Computer Engineering University of California at Santa Barbara Santa Barbara, CA 93106
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Abstract

Long-wavelength (1300/1550 nm) vertical-cavity surface-emitting lasers (VCSELs) have been much more difficult to realize than VCSELs at shorter wavelengths such as 850/980 nm. The primary reason for this has been the low refractive index difference and reflectivity associated with lattice-matched InP/InGaAsP mirrors. A solution to this problem is to “wafer-fuse” high-reflectivity GaAs/AlGaAs mirrors to InP/InGaAsP active regions. This process has led to the first room-temperature continuous-wave (CW) 1.54 μm VCSELs. In this paper, we discuss two device geometries which employ wafer-fused mirrors, both of which lead to CW operation. We also discuss fabrication of WDM arrays using long-wavelength VCSELs.

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References

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