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Low Dielectric Constant Polymers For On-Chip Interlevel Dielectrics With Copper Metallization

Published online by Cambridge University Press:  15 February 2011

Ronald J. Gutmann,
T. Paul Chow,
David J. Duquette,
Toh-Ming Lu,
John F. Mcdonald and
Shyam P. Murarka
Ronald J. Gutmann
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
T. Paul Chow
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
David J. Duquette
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
Toh-Ming Lu
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
John F. Mcdonald
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
Shyam P. Murarka
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Low dielectric constant insulators offer the potential of improved interconnection delay and conductor packing density in advanced ICs, both with current metallization schemes and with future technologies such as copper. While polymer materials are very promising in such applications, significant issues must be addressed before oxide-based materials are replaced in mainstream applications. This invited paper reviews the directions of our program, which has emphasized the use of vapor deposited polymers compatible with uniform deposition over large diameter wafers and copper metallization. Therefore, emphasis is placed on polymer material characteristics compatible with inlaid metal (ie. Dual Damascene) patterning.

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