Hostname: page-component-6898cfcb55-zsp5v Total loading time: 0 Render date: 2026-11-11T19:04:12.008Z Has data issue: false hasContentIssue false
  • English
  • Français

Low Dislocation Soi by Oxygen Implantation

Published online by Cambridge University Press:  28 February 2011

A.H. Van Ommen
A.H. Van Ommen*
Affiliation:
Philips Research Laboratories, 5600JA Eindhoven, The Netherlands
Get access

Abstract

Recent results on silicon on insulator structures formed by implantation of oxygen and subsequent high temperature annealing will be discussed. The resulting silicon on insulator structure has sharp interfaces and a dislocation density of less than 105 cm -2 in the top silicon film. This density of defects is several orders of magnitude lower than previously reported values. The relation between the microstructure after implantation and this relatively low defect density will be discussed. Silicon point defects will be shown to play an important role in the establishment of the microstructure during implantation. Relations between implantation conditions, point defect concentrations and microstructure will be discussed to come to the formulation of the boundary conditions for the formation of high quality silicon on insulator material by this method.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

1 Izumi, K., Omura, Y. and Sakai, T., J.Electronic Materials 12, 845 (1983).Google Scholar
2 Jassaud, C., Stoemenos, J., Margail, J., Dupuy, D., Blanchard, B. and Bruel, M., Appl.Phys.Lett. 46, 1046 (1985).Google Scholar
3 Celler, G.K., Hemment, P.L.F., West, K.W. and Gibson, J.M., Appl.Phys.Lett. 48, 532 (1986).Google Scholar
4 Colinge, J.-P., IEEE Electr.Dev.Lett. EDL–7, 244 (1986).Google Scholar
5 van Ommen, A.H., Ligthart, H.J., Politiek, J. and Viegers, M.P.A., Mat.Res.Soc.Symp.Proc. Vol.93, edited by Gibson, U., Pronko, P.P. and White, A.E., The MRS Pittsburg 1987.Google Scholar
6 van Ommen, A.H., Koek, B.H. and Viegers, M.P.A., Appl.Phys.Lett. 49, 1062 (1986).CrossRefGoogle Scholar
7 Sjoreen, T.P., Holland, O.W., Fathy, D. and Narayan, J., Nucl.Instr.Meth. B10 11, 574 (1985).Google Scholar
8 Holland, O.W., Fathy, D., Sjoreen, T.P., Narayan, J. and More, K., in Advanced Applications of Ion Implantation, edited by Current, M.I. and Sadana, D.K., Proc.Soc.Photo-opt. Instrum.Eng.530, 255 (1985).Google Scholar
9 Holland, O.W., Sjoreen, T.P., Fathy, D. and Narayan, J., Appl.Pys.Lett. 45, 1081 (1985).Google Scholar
10 Stoemenos, J., Jassaud, C., Bruel, M. and Margail, J., J.Cryst.Growtht. 73, 546 (1985).Google Scholar
11 Bruel, M., Margail, J., Stoemenos, J., Martin, P. and Jassaud, C., Vacuum 35, 589 (1985).Google Scholar
12 Margail, J., Stoemenos, J., Jassaud, C., Dupuy, M., Martin, P., Blanchard, B. and Bruel, M. in Energy Beam-Solid Interactions and Transient Thermal Processing, MRS Europe, Les Editions De Physique, 91944 Les Ulis, France, 519 (1985).Google Scholar
13 Stoemenos, J. and Margail, J., Thin Solid Films 135, 115 (1986).Google Scholar
14 Maillet, S., Grob, A., Stuck, R., Grob, J.J., Golanski, A., Oberlin, J.C. and Pantel, R. in Energy Beam-Solid Interactions and Transient Thermal Processing, MRS Europe, Les Editions De Physique, 91944 Les Ulis, France, 489 (1985).Google Scholar
15 Golanski, A., Perio, A., Grob, J.J., Stuck, R., Maillet, S. and Clavelier, E., Appl.Phys.Lett. 49, 1423 (1986).Google Scholar
16 Maillet, S., Stuck, R., Grob, J.J., Golanski, A., Pantel, R. and Perio, A., Nucl.Instr.Meth. B19 20, 294 (1987).CrossRefGoogle Scholar
17 Nesbit, L., Stiffler, S., Slusser, G. and Vinton, H., J.Electrocr.em.Soc. 132, 2713 (1985).Google Scholar
18 Robbinson, M.T. and Torrens, I.M., Phys.Rev. B9, 5008 (1974).CrossRefGoogle Scholar
19 White, A.E., Short, K.T., Batstone, J.L., Jacobsen, D.C., Poate, J.M. and West, K.W., Appl.Phys.Lett. 50, 19 (1987).Google Scholar
20 Reeson, K.J., Nucl.Instr.Meth. B19 20, 269 (1987).Google Scholar
21 Leroy, B. and Ploughoven, C. J.Electrochem.Soc. 127, 961 (1980).Google Scholar
22 Olego, D.J., Baumgart, H. and Celler, G.K., submitted to Appl.Phys.Lett.Google Scholar
23 Duncan, W.M., Chang, P.-H., Mao, B.-Y. and Chen, C.-E., Appl.Phys.Let't. 51, 773 (1987).CrossRefGoogle Scholar
24 Weber, J., Baumgart, H., Petruzello, J. and Celler, G.K., these proceedings.Google Scholar
25 van Ommen, A.H., Koek, B.H. and Viegers, M.P.A., Appl.Phys.Lett. 49, 628 (1986).Google Scholar
26 Goesele, U. and Tan, T.Y.; Mat.Res.Soc.Symp.Proc. Vol.36, 105 (1985).Google Scholar