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Low Frequency Noise Behavior in a-Si:H Schottky Barrier Devices

Published online by Cambridge University Press:  10 February 2011

K. Aflatooni,
A. Nathan and
R. Hornsey
K. Aflatooni
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada, kaflatoo@venus.uwaterloo.ca
A. Nathan
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada, kaflatoo@venus.uwaterloo.ca
R. Hornsey
Affiliation:
Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada, kaflatoo@venus.uwaterloo.ca
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Abstract

We present a systematic experimental study of low frequency noise behavior in Mo/a-Si:H Schottky diodes under reverse bias operation. The noise in the Schottky diode was found to increase with increasing reverse current and with an approximate 1/f behavior at low bias voltages, yielding a Hooge parameter in the range (2 to 3) × 10−4. At high reverse voltages, due to electrical stressing and hence, bias-induced material instability, a significant deviation from the 1/f behavior was observed.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996, 747
Copyright
Copyright © Materials Research Society 1996

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