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Low Interface State Density Oxide-GaAs Structures Fabricated by In-Situ Molecular Beam Epitaxy

Published online by Cambridge University Press:  10 February 2011

M. Passlack and
M. Hong
M. Passlack
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
M. Hong
Affiliation:
Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974
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Abstract

We have extended the spectrum of molecular-beam epitaxy (MBE) related techniques by introducing in-situ deposition of oxides. The oxide films have been deposited on clean, atomically ordered (100) GaAs wafer surfaces using molecular beams of gallium-, magnesium-, silicon-, or aluminum oxide. Among the fabricated oxide-GaAs heterostructures, Ga2O3-GaAs interfaces exhibit unique electronic properties including an interface state density Dit in the low 1010 cm−2eV−1 range and an interface recombination velocity S of 4000 cm/s. The formation of inversion layers in both n- and p-type GaAs has been clearly established. Further, thermodynamic and photochemical stability of excellent electronic interface properties of Ga2O3-GaAs structures has been demonstrated.

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References

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