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Low Resistance Copper Via Technology

Published online by Cambridge University Press:  10 February 2011

K. Ueno,
V. M. Donnelly,
Y. Tsuchiya and
H. Aoki
K. Ueno
Affiliation:
ULSI Device Development Lab., NEC Corp.,1120 Shimokuzawa, Sagamihara, 229–1198, JAPAN
V. M. Donnelly
Affiliation:
Bell Labs., Lucent Technologies, Murray Hill, New Jersey 07974
Y. Tsuchiya
Affiliation:
ULSI Device Development Lab., NEC Corp.,1120 Shimokuzawa, Sagamihara, 229–1198, JAPAN
H. Aoki
Affiliation:
ULSI Device Development Lab., NEC Corp.,1120 Shimokuzawa, Sagamihara, 229–1198, JAPAN
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Abstract

In order to reduce specific contact resistance at via/interconnect interface and to avoid device degradation with Cu diffusion into dielectrics, via cleaning technology is a critical issue for a scaled down Cu multilevel metallization. Effects of cleaning processes are investigated for CHF3 plasma-etched SiO2/SiN/Cu via-structures. Effects of dilute HF (DHF) cleaning, hydrogen plasma cleaning, oxygen plasma cleaning, hexafluoroacetylacetone (H(hfac)) vapor cleaning, and vacuum anneal cleaning are investigated using an angle-resolved x-ray photoelectron spectroscopy (XPS). Cu contamination removal using dilute oxalic acid (DOA) is investigated using total reflection xray fluorescence analysis (TRXRF). Based on the results, we developed an optimized cleaning sequence which consists of a brief oxygen plasma exposure, DHF dipping, followed by exposure to H(hfac) vapors. The cleaning sequence is effective in obtaining a clean dielectric surface and an oxide-free Cu surface at via bottom. Direct-contacted via structures were fabricated by a dualdamascene process using the cleaning sequence. The specific contact resistance reduces to 20% of the reported values. We expect that the via resistance is low enough to be used in 0.13 µm generation and beyond.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999, 521
Copyright
Copyright © Materials Research Society 1999

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