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A Low Temperature Photonic Crystal Technology for Integration with Modern CMOS Technologies

Published online by Cambridge University Press:  01 February 2011

Khadijeh Bayat,
Mahdi Farrokh Baroughi,
Sujeet K. Chaudhuri and
Safieddin Safavi-Naeini
Khadijeh Bayat
Affiliation:
kbayat@uwaterloo.ca, University of Waterloo, Electrical and Computer Engineering, 200, Univ. Ave. W., Waterloo, Ontario, N2L3G1, Canada
Mahdi Farrokh Baroughi
Affiliation:
M.FarrokhBaroughi@sdstate.edu, South Dakota State University, Electrical Engineering and Computer Science, 201 Harding Hall, Box 2220, South Dakota State University, Brookings, SD, 57007, United States
Sujeet K. Chaudhuri
Affiliation:
sujeet@maxwell.uwaterloo.ca, University of Waterloo, Electrical and Computer Engineering, 200, Univ. Ave. W., Waterloo, Ontario, N2L3G1, Canada
Safieddin Safavi-Naeini
Affiliation:
safavi@maxwell.uwaterloo.ca, University of Waterloo, Electrical and Computer Engineering, 200, Univ. Ave. W., Waterloo, Ontario, N2L3G1, Canada
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Abstract

In this paper, low temperature amorphous silicon oxynitride (a-SixOyNz:H) thin film technology is proposed for implementation of CMOS compatible photonic crystal (PC) based optical integrated circuits (OICs). The a-SixOyNz films of different refractive indices were developed by plasma enhanced chemical vapor deposition (PECVD) technique using silane, nitrous oxide, and ammonia as gas phase precursors at 300°C. The films with refractive index between 1.43 − 1.75 were obtained by changing gas flow ratios. Such thin films can be used as cladding and core layers in photonic crystal structure.

The bandgap and guiding properties of the a-SixOyNz based PCs were simulated and was shown that the a-SixOyNz:H based PC technology offers larger feature sizes than a conventional silicon based photonic crystals.

Keywords

plasma-enhanced CVD (PECVD) (chemical reaction)optical propertiescrystal

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References

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